Fabrication steps¶
These images illustrate each step. The top panels are side view and bottom are top view.
Start with SOI wafer
Deposit protective oxide
Implant dopants for P-Si, N-Si, and W-centers. Anneal
Strip protective oxide and dep SiN etch stop
Liftoff TiAu small pads for superconductor contacts
Deposit and pattern WSi superconductor
Deposit hTron spacer oxide
Liftoff resistor layer
Partial etch for LEDs and waveguides
Full etch for waveguides
Deposit TiAu small pad for LED contacts
Deposit sidewall insulator
Etch vias to superconductor and LED pads
Deposit TiAu wiring layer
Deposit top cladding
Etch vias to wirebond pads