Fabrication steps¶
These images illustrate each step. The top panels are side view and bottom are top view.
Start with SOI wafer

Deposit protective oxide

Implant dopants for P-Si, N-Si, and W-centers. Anneal

Strip protective oxide and dep SiN etch stop

Liftoff TiAu small pads for superconductor contacts

Deposit and pattern WSi superconductor

Deposit hTron spacer oxide

Liftoff resistor layer

Partial etch for LEDs and waveguides

Full etch for waveguides

Deposit TiAu small pad for LED contacts

Deposit sidewall insulator

Etch vias to superconductor and LED pads

Deposit TiAu wiring layer

Deposit top cladding

Etch vias to wirebond pads
