TY - RPRT TI - The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon AU - Li, Sheng S PY - 1979 PB - National Bureau of Standards CY - Gaithersburg, MD SN - NBS SP 400-47 DO - 10.6028/NBS.SP.400-47 ER -